MT301 |
Part Number | MT301 |
Manufacturer | MOS-TECH |
Description | Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT301 FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● T... |
Features |
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252-5L package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -30A 28@ VGS=-10V 35 @ VGS=-4.5V NOTE:The MT301 is available in a lead-free package S1 S2 G1 G2 D1 D2 ABSOLUTE MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit -30 ±20 -30 - Pulse d b IDM -125 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TS... |
Document |
MT301 Data Sheet
PDF 258.08KB |
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