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RFP10P03L |
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| Part Number | RFP10P03L |
| Manufacturer | Harris |
| Description | • 10A, 30V • rDS(ON) = 0.200Ω • Temperature Compensating PSPICE Model • PSPICE Thermal Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature Ordering Information ... |
| Features |
Description
• 10A, 30V • rDS(ON) = 0.200Ω • Temperature Compensating PSPICE Model • PSPICE Thermal Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature Ordering Information These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be... |
| Document |
 RFP10P03L Data Sheet
PDF 271.70KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RFP10P03L |
Intersil Corporation |
10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET |
|
| 2 | RFP10P12 |
GE Solid State |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS |
|
| 3 | RFP10P15 |
Intersil Corporation |
-10A/ -150V/ 0.500 Ohm/ P-Channel Power MOSFET |
|
| 4 | RFP10P15 |
GE Solid State |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS |
|
| 5 | RFP10N12 |
GE Solid State |
(RFP10N12 / RFP10N15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS |
|