FQA9N90C_F109 |
Part Number | FQA9N90C_F109 |
Manufacturer | Fairchild Semiconductor |
Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to ... |
Features |
• 9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 45 nC) • Low Crss . 14 pF) • 100% Avalanche Tested • RoHS compliant April 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electroni... |
Document |
FQA9N90C_F109 Data Sheet
PDF 2.82MB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQA9N90C-F109 |
ON Semiconductor |
N-Channel QFET MOSFET | |
2 | FQA9N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
3 | FQA9N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
4 | FQA9N90-F109 |
ON Semiconductor |
N-Channel MOSFET | |
5 | FQA9N90_F109 |
Fairchild Semiconductor |
N-Channel QFET MOSFET |