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FDMS3660AS |
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| Part Number | FDMS3660AS |
| Manufacturer | Fairchild Semiconductor |
| Description | This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The co... |
| Features |
Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
July 2013
General Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy... |
| Document |
 FDMS3660AS Data Sheet
PDF 389.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FDMS3660S |
Fairchild Semiconductor |
Asymmetric Dual N-Channel MOSFET |
|
| 2 | FDMS3660S |
ON Semiconductor |
Asymmetric Dual N-Channel MOSFET |
|
| 3 | FDMS3662 |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDMS3662 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMS3664S |
Fairchild Semiconductor |
MOSFET |
|