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BCF240T |
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| Part Number | BCF240T |
| Manufacturer | BeRex |
| Description | BCF240T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 2400 µm) The BeRex BCF240T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 2400 micron gate width make the product ideall... |
| Features |
• 30.4 dBm Typical Output Power • 9.8 dB Typical Power Gain @ 12 GHz • Low Phase Noise • 0.3 X 2400 Micron Recessed Gate Applications • Commercial • Military / Hi-Rel • Test & Measurement DC CHARACTERISTIC (Ta = 25° C) PARAMETER/TEST CONDITIONS Idss Saturated Drain Current (Vgs = 0V, Vds = 2V) Gm Transconductance (Vds = 3V, Vgs = 50% Idss) Vp Pinch-off Volt... |
| Document |
 BCF240T Data Sheet
PDF 394.12KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BCF29 |
NXP |
PNP general purpose transistors |
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| 2 | BCF29 |
Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors |
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| 3 | BCF29 |
Guangdong Kexin |
(BCF29 / BCF30) PNP General Purpose Transistors |
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| 4 | BCF020T |
BeRex |
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP |
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| 5 | BCF030T |
BeRex |
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP |
|