CS5N65A4 |
Part Number | CS5N65A4 |
Manufacturer | Huajing Microelectronics |
Description | CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche en... |
Features |
l Fast Switching l Low ON Resistance(Rdson≤1.9Ω) l Low Gate Charge (Typical Data:19nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avala... |
Document |
CS5N65A4 Data Sheet
PDF 836.74KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CS5N65A3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS5N65A7H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS5N65A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS5N65FA9H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS5N20A3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |