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CS10N70FA9D |
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| Part Number | CS10N70FA9D |
| Manufacturer | Huajing Microelectronics |
| Description | CS10N70F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 700 10 50 0.78 sw... |
| Features |
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:39nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
VESD(G-S)
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C... |
| Document |
 CS10N70FA9D Data Sheet
PDF 348.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS10N70A8D |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 2 | CS10N50A8R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 3 | CS10N50FA9R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 4 | CS10N60 |
ETC |
VDMOS Transistor |
|
| 5 | CS10N60A8HD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|