CS1N80A1H |
Part Number | CS1N80A1H |
Manufacturer | Huajing Microelectronics |
Description | CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 800 1 3 12... |
Features |
l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:6.7nC) l Low Reverse transfer capacitances(Typical:2.6pF) l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
PD
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Dr... |
Document |
CS1N80A1H Data Sheet
PDF 536.15KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CS1N80A3H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS1N80A4H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS1N50A1 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS1N60 |
EDN |
VDMOS | |
5 | CS1N60A1H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |