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CS100N03FB9 |
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| Part Number | CS100N03FB9 |
| Manufacturer | Huajing Microelectronics |
| Description | CS100N03F B9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 30 100 40 4.0 swit... |
| Features |
l Trench FET Power MOSFET l Low ON Resistance(Rdson≤5.3mΩ) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:300pF) l 100% Single Pulse avalanche energy Test
Applications：
UPS,DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
I
D
a1
M
VGS
EAS a2 EAR a1 IAR a1 dv/dt a3
PD
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 10... |
| Document |
 CS100N03FB9 Data Sheet
PDF 718.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS100N03B4 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 2 | CS100N03B8 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 3 | CS1001-7R |
Power-One |
100 Watt DC-DC Converters |
|
| 4 | CS1005U |
CUI |
CURRENT SENSOR |
|
| 5 | CS1008 |
Chilisin Electronics |
SMD Wire Wound Ceramic Chip Inductors |
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