BD550 Inchange Semiconductor Silicon NPN Power Transistors Datasheet, en stock, prix

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BD550

Inchange Semiconductor
BD550
BD550 BD550
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Part Number BD550
Manufacturer Inchange Semiconductor
Description High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 110V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use ...
Features e IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.5A VBE(on) Base-Emitter On Voltage ICER Collector Cutoff Current IC= 4A ;VCE= 4V VCE= 110V; RBE= 100Ω ICEO Collector Cutoff Current VCE= 95V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 4A ; VCE= 4V fT Current Gain-Bandwidth Product IC= 0.2A ; VCE= 10V BD550 MIN TYP. MAX UNIT 110 V 2 V 1.75 V 1 mA 5 mA 1 mA 15 75 5 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information co...

Document Datasheet BD550 Data Sheet
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