Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
MJD44H11 |
Click to view a larger image
| Part Number | MJD44H11 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD45H11 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for rob... |
| Features |
e,Junction to Ambient 71.4 ℃/W
MJD44H11
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
MJD44H11
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
80
V
VCE(sat) Collector-EmitterSaturation Voltage IC= 8A ;IB= 0.4 A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A ;IB= 0.8 A
1.5
V
ICES
Collector Cutoff Current
VCE=Rated VCEO; VBE= 0
1.0 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0 μA
hF... |
| Document |
 MJD44H11 Data Sheet
PDF 243.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD44H11 |
Kexin |
Complementary Power Transistors |
|
| 2 | MJD44H11 |
Motorola |
SILICON POWER TRANSISTORS |
|
| 3 | MJD44H11 |
ST Microelectronics |
Complementary power transistors |
|
| 4 | MJD44H11 |
Fairchild |
NPN Epitaxial Silicon Transistor |
|
| 5 | MJD44H11 |
ON Semiconductor |
Complementary Power Transistors |
|