2SB1412 Inchange Semiconductor Silicon PNP Power Transistor Datasheet, en stock, prix

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2SB1412

Inchange Semiconductor
2SB1412
2SB1412 2SB1412
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Part Number 2SB1412
Manufacturer Inchange Semiconductor
Description ·Low collector-to-emitter saturation voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable opera...
Features -Base Breakdown Voltage IC= -50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50uA; IC= 0 ICBO Collector Cutoff Current VCB= -20V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -0.5A; VCE= -2V COB Output Capacitance IE= 0; VCB= -20V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= -50mA; VCE= -6V
 hFE1 Classifications P Q R 82-180 120-270 180-390 2SB1412 MIN TYP. MAX UNIT -1.0 V -30 V -20 V -6 V -0.5 uA -0.5 uA 82 390 60 pF 120 MHz isc website:www.iscsemi.co...

Document Datasheet 2SB1412 Data Sheet
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