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MJD112 |
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| Part Number | MJD112 |
| Manufacturer | Fairchild Semiconductor |
| Description | MJD112 NPN Silicon Darlington Transistor MJD112 NPN Silicon Darlington Transistor Features • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suf... |
| Features |
• High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) November 2006 tm Equivalent Circuit C B 1 D-PAK 1.Base 2.Collector 3.Emitter R1 R2 Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter R1 ≅ 10kΩ R2 ≅ 0.6kΩ E Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) TJ Junction Temperature TSTG Storage Temperature ... |
| Document |
 MJD112 Data Sheet
PDF 113.67KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD112 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
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| 2 | MJD112 |
MCC |
Silicon NPN epitaxial planer Transistors |
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| 3 | MJD112 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
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| 4 | MJD112 |
CDIL |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS |
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| 5 | MJD112 |
JCET |
NPN Transistor |
|