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MJD3055 |
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| Part Number | MJD3055 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJD2955 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations fo... |
| Features |
sc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
INCHANGE Semiconductor
MJD3055
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 3.3A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 30V; IB=0
ICBO
Collector Cutoff Current
VCB= 100V; IE=0
IEBO
Emitter Cutoff Curre... |
| Document |
 MJD3055 Data Sheet
PDF 251.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJD3055 |
Fairchild |
General Purpose Amplifier |
|
| 2 | MJD3055 |
ST Microelectronics |
Complementary Silicon Power Transistors |
|
| 3 | MJD3055 |
ON |
Complementary Power Transistors |
|
| 4 | MJD3055 |
Motorola |
SILICON POWER TRANSISTORS |
|
| 5 | MJD3055 |
GME |
Epitaxial Planar NPN Transistor |
|