Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
MJD253 |
Click to view a larger image
| Part Number | MJD253 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJD243 ·Minimum Lot-to-Lot variations for robust devi... |
| Features |
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
MJD253
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0
-100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5 A ;IB= -50mA
-0.3
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A ;IB= -0.1A
-0.6
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A ;IB= -0.2A
-1.8
V
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter... |
| Document |
 MJD253 Data Sheet
PDF 243.96KB |
| Distributor | Stock | Price | Buy |
|---|
