MBR20H150CT |
Part Number | MBR20H150CT |
Manufacturer | Inchange Semiconductor |
Description | Schottky Barrier Rectifier INCHANGE Semiconductor MBR20H150CT FEATURES ·Dual rectifier construction,positive center tap ·Low Power Loss,High Efficiency ·Guard ring for overvoltage protection ·Metal ... |
Features |
·Dual rectifier construction,positive center tap ·Low Power Loss,High Efficiency ·Guard ring for overvoltage protection ·Metal of silicon rectifier, majonty carrier conduction ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) IFSM IRRM TJ Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current Nonrepetitive Pe... |
Document |
MBR20H150CT Data Sheet
PDF 213.03KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | MBR20H150CT |
EIC |
Dual Schottky Barrier Rectifier | |
2 | MBR20H150CT |
Taiwan Semiconductor |
20.0AMPS. Schottky Barrier Rectifiers | |
3 | MBR20H150CT |
Vishay Siliconix |
Dual High-Voltage Schottky Rectifiers | |
4 | MBR20H150CT |
LGE |
Schottky Barrier Rectifiers | |
5 | MBR20H150CTG |
ON Semiconductor |
Power Rectifier |