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MJE210G |
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| Part Number | MJE210G |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MJE200G (NPN), MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current ... |
| Features |
• High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VCEO VCB VEB IC ICM IB PD 40 Vdc 25 Vdc 8.0 Vdc 5.0 Adc 10 Adc 1.0 Adc 15 W 0.12 mW/_C Total Power Dissipation @ TC = 25_C Derate above 25_C PD 1.5 W 0.012 m... |
| Document |
 MJE210G Data Sheet
PDF 155.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MJE210 |
ST Microelectronics |
SILICON PNP TRANSISTOR |
|
| 2 | MJE210 |
Fairchild |
PNP Epitaxial Silicon Transistor |
|
| 3 | MJE210 |
Motorola |
5 AMPERE POWER TRANSISTORS |
|
| 4 | MJE210 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 5 | MJE210 |
ON Semiconductor |
Complementary Silicon Power Plastic Transistors |
|