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MJD6039 |
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| Part Number | MJD6039 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·High DC Current Gain- : hFE = 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT... |
| Features |
stered trademark
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2 A ;IB= 8mA
VBE(on) Base-Emitter On Voltage
IC= 2A ;VCE= 4V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1 A ; VCE= 4V
hFE-2
DC Current Gain
IC= 2A ; VCE= 4V
COB
Output Capacitance
IE= 0; VCB=... |
| Document |
 MJD6039 Data Sheet
PDF 199.25KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | MJD6036 |
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| 2 | MJD6039 |
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