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GS832118E-V |
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| Part Number | GS832118E-V |
| Manufacturer | GSI Technology |
| Description | Applications The GS832118/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications s... |
| Features |
• IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V or 2.5 V core power supply • 1.8 V or 2.5 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 165-bump FP-BGA package • RoHS-compliant 165-bump BGA package available Functional Description Applications The GS832118/32/36E-xxxV is a 37,748,736-bit high performance synchronous SRAM with a 2-bit burst address counter. Altho... |
| Document |
 GS832118E-V Data Sheet
PDF 729.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GS832118E |
GSI Technology |
36Mb Sync Burst SRAMs |
|
| 2 | GS832118GE |
GSI Technology |
36Mb Sync Burst SRAMs |
|
| 3 | GS832118GE-V |
GSI Technology |
36Mb Sync Burst SRAMs |
|
| 4 | GS832132E |
GSI Technology |
36Mb Sync Burst SRAMs |
|
| 5 | GS832132E-V |
GSI Technology |
36Mb Sync Burst SRAMs |
|