AM50N06-20D |
Part Number | AM50N06-20D |
Manufacturer | Analog Power |
Description | Analog Power N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. ... |
Features |
C=25oC PD
TJ, Tstg
60 ±20 41 100 50 50 -55 to 175
V
A
A W oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RθJA
Maximum Junction-to-Case
RθJC
Maximum
50
3.0
Units
oC/W oC/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number: DS-AM50N06-20_A
Analog Power
AM50N06-20D
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate-Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain CurrentA
Drain-Sou... |
Document |
AM50N06-20D Data Sheet
PDF 104.70KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AM50N06-15D |
Analog Power |
N-Channel MOSFET | |
2 | AM50N03 |
AiT Semiconductor |
MOSFET | |
3 | AM50N03-12D |
Analog Power |
N-Channel MOSFET | |
4 | AM50N03-12I |
Analog Power |
N-Channel MOSFET | |
5 | AM50N04 |
AiT Semiconductor |
50A N-CHANNEL MOSFET |