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STN4412 |
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| Part Number | STN4412 |
| Manufacturer | Stanson Technology |
| Description | STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to min... |
| Features |
ww.stansontech.com
Copyright © 2007, Stanson Corp.
STN4412 2007. V1
STN4412
N Channel Enhancement Mode MOSFET
6.8A
※ STN4412S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS 30 Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ VGSS ID IDM ±20 6.8 5.6 30 Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ 2.3 2.8 1.6 150 Storgae Temperature Range TSTG -55/150 Thermal R... |
| Document |
 STN4412 Data Sheet
PDF 479.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STN4412S8RG |
Stanson Technology |
MOSFET |
|
| 2 | STN4412S8TG |
Stanson Technology |
MOSFET |
|
| 3 | STN4416 |
Stanson Technology |
MOSFET |
|
| 4 | STN4402 |
Stanson Technology |
MOSFET |
|
| 5 | STN4426 |
Stanson Technology |
MOSFET |
|