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STN3446 |
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| Part Number | STN3446 |
| Manufacturer | Stanson Technology |
| Description | The STN3446 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minim... |
| Features |
T
5.3A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
TA=25℃ Continuous Drain Current (TJ=150℃)
TA=70℃
Pulsed Drain Current
ID IDM
5.3 A
4.2
25 A
Continuous Source Current (Diode Conduction)
IS
1.7 A
Power Dissipation Operation Junction Temperature
TA=25℃ TA=70℃
PD TJ
2.0 1.3 150
W ℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
90 ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansont... |
| Document |
 STN3446 Data Sheet
PDF 322.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STN3400 |
Semtron |
N-Channel Enhancement Mode MOSFET |
|
| 2 | STN3400A |
Semtron |
N-Channel Enhancement Mode MOSFET |
|
| 3 | STN3404 |
Semtron |
N-Channel Enhancement Mode MOSFET |
|
| 4 | STN3406 |
Semtron |
N-Channel Enhancement Mode MOSFET |
|
| 5 | STN3414 |
Semtron |
N-Channel Enhancement Mode MOSFET |
|