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6604 |
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| Part Number | 6604 |
| Manufacturer | Tuofeng Semiconductor |
| Description | Shenzhen Tuofeng Semiconductor Technology Co., Ltd 6604 20V Complementary MOSFET Product Summary N-Channel VDS= 20V ID= 3.4A (VGS=4.5V) RDS(ON) < 65mΩ (VGS=4.5V) < 75mΩ (VGS=2.5V) < 100mΩ (VGS=1.8V) ... |
| Features |
enzhen Tuofeng Semiconductor Technology Co., Ltd 6604
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
Conditions ID=250µA, VGS=0V
Min Typ Max Units 20 V
IDSS Zero Gate Voltage Drain Current
VDS=20V, VGS=0V
1 µA
IGSS VGS(th) ID(ON)
Gate-Body leakage current Gate Threshold Voltage On state drain current
VDS=0V, VGS= ±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V
±100
0.4 0.7
1
13
nA V A
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=3.4A VGS=2.5V, ID=3A
51 65 58 75
mΩ mΩ
VGS=1.8V, ... |
| Document |
 6604 Data Sheet
PDF 587.71KB |
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