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D45C6 |
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| Part Number | D45C6 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D44C6 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desig... |
| Features |
Resistance, Junction to Case
MAX UNIT 4.2 ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistors
D45C6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA
-0.5 V
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -100mA
-1.3 V
ICES
Collector Cutoff Current
VCE= -55V, VBE= 0
-10 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-100 μA
hFE-1
DC Current Gain
IC= -0.2A; VCE= -1V
40
120
hFE-2
DC Curren... |
| Document |
 D45C6 Data Sheet
PDF 212.00KB |
| Distributor | Stock | Price | Buy |
|---|
