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12N18 |
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| Part Number | 12N18 |
| Manufacturer | Inchange Semiconductor |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 180V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) ·Fast Switching ·Minimum Lo... |
| Features |
·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 180V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 180 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Plused 30 A PD Total Dissipation @TC=25℃ 75 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage ... |
| Document |
 12N18 Data Sheet
PDF 261.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 12N10 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 2 | 12N10P |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
| 3 | 12N170K5 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | 12N035 |
BL |
N-Channel Field Effect Transistor |
|
| 5 | 12N06Z |
UNISONIC TECHNOLOGIES |
12A 60V N-CHANNEL POWER MOSFET |
|