RB717F Transys SCHOTTKY BARRIER DIODE Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

RB717F

Transys
RB717F
RB717F RB717F
zoom Click to view a larger image
Part Number RB717F
Manufacturer Transys
Description 1. 01 REF RB717F SCHOTTKY BARRIER DIODE FEATURES: Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 30 mA Collector-base voltage VR: 40 V Operating and storage junction temperature range ...
Features Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 30 mA Collector-base voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: 1. 30¡ À0. 03 SOT-323 1. 25¡ À0. 05 2. 30¡ À0. 05 Unit: mm 0. 30 2. 00¡ À0. 05 1 3 2 MARKING: 3E ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR Test conditions IR= 100µA VR=10V MIN MAX 40 1 Forward voltage VF IF=1mA 0.37 Diode capacitance CD VR=1V, f=1MHz 5 UNIT V µA V pF ...

Document Datasheet RB717F Data Sheet
PDF 60.57KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 RB717F
MCC
Schottky Barrier Diode Datasheet
2 RB717F
Kexin
Schottky barrier diode Datasheet
3 RB717F
LGE
Schottky Barrier Diode Datasheet
4 RB717F
JCET
Schottky barrier Diode Datasheet
5 RB717F
LITE-ON
SURFACE MOUNT SCHOTTKY BARRIER DIODE Datasheet
More datasheet from Transys



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact