Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
1SS357 |
Click to view a larger image
| Part Number | 1SS357 |
| Manufacturer | Transys |
| Description | 1SS357 Schottky Diodes FEATURES z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak reverse voltage DC reverse voltage Me... |
| Features |
z Small Package z Low VF, low IR
MAKING: S31
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current
Symbol VRM VR IO IFSM
Limits 45 40 0.1 1
Junction temperature
Tj
125
Storage temperature
Tstg
-55~+125
Unit V V A A ℃
℃
Electrical Ratings @TA=25℃ Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
Reverse current Capacitance between terminals
VF
IR CT
0.28 0.36
0.6
V
5 µA
25 pF
Conditions IF=1mA IF=10mA
IF=100mA VR=40V
VR=0,f=1MHz
... |
| Document |
 1SS357 Data Sheet
PDF 79.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS350 |
Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode |
|
| 2 | 1SS351 |
Sanyo Semicon Device |
Sillicon Epitaxial Schottky Barrier Diode |
|
| 3 | 1SS351 |
ON Semiconductor |
Schottky Barrier Diode |
|
| 4 | 1SS352 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 5 | 1SS352 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATION DIODE |
|