BAV99T |
Part Number | BAV99T |
Manufacturer | LGE |
Description | BAW56T/BAV70T/BAV99T Switching Diode SOT-523 Features Fast Switching Speed For General Purpose Switching Applications High Conductance Dimensions in inches and (millimeters) BAW56T Marking: J... |
Features |
Fast Switching Speed For General Purpose Switching Applications High Conductance
Dimensions in inches and (millimeters)
BAW56T Marking: JD BAV70T Marking: JJ
BAV99T Marking: JE
Maximum Ratings @TA=25℃
Parameter Reverse voltage Forward current Forward power dissipation Junction temperature Storage temperature
Symbol VR IO PD Tj Tstg
Limits 85 75 150 150
-65~150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse breakdown voltage
V(BR)
IR= 1μA
Reverse voltage leakage current
Forward voltage Diode capacitance Reverse reco... |
Document |
BAV99T Data Sheet
PDF 207.62KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BAV99 |
Toshiba |
Silicon Epitaxial Planar Switching Diodes | |
2 | BAV99 |
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3 | BAV99 |
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4 | BAV99 |
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5 | BAV99 |
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