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2SK1213 |
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| Part Number | 2SK1213 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed ... |
| Features |
0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=600V; VGS= 0
VSD
Forward On-Voltage
IS=6A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=3A; RL=100Ω
toff
Turn-off time
2SK1213
MIN TYP. MAX UNIT
600
V
1.5
3.5
V
0.95 1.25
Ω
±100 nA
300 uA
2.0
V
25
50
ns
40
80
ns
20
40
ns
85
170
ns
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time with... |
| Document |
 2SK1213 Data Sheet
PDF 203.98KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK121 |
Sony |
Silicon N Channel Junction FET |
|
| 2 | 2SK1211 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK1212 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK1212-01 |
Fuji |
N-CHANNEL SILICON POWER MOS-FET |
|
| 5 | 2SK1212-01R |
Fuji |
N-CHANNEL SILICON POWER MOS-FET |
|