Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
HFS4N65F |
Click to view a larger image
| Part Number | HFS4N65F |
| Manufacturer | SemiHow |
| Description | HFS4N65F July 2015 HFS4N65F 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellen... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 3.0 ȍ 7S #9GS=10V 100% Avalanche Tested
BVDSS = 650 V RDS(on) typ ȍ ID = 4 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR
PD
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25) – Cont... |
| Document |
 HFS4N65F Data Sheet
PDF 199.68KB |
| Distributor | Stock | Price | Buy |
|---|
