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2SK764A |
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| Part Number | 2SK764A |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation... |
| Features |
TRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=25 V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=320V; VGS= 0
2SK764A
MIN TYP MAX UNIT
450
V
1.0
5.0
V
0.5 0.75
Ω
±1
uA
100
uA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for... |
| Document |
 2SK764A Data Sheet
PDF 237.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK764 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK762 |
Panasonic Semiconductor |
Silicon N-channel Power F-MOS FET |
|
| 3 | 2SK762 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK762A |
Panasonic Semiconductor |
Silicon N-channel Power F-MOS FET |
|
| 5 | 2SK763 |
INCHANGE |
N-Channel MOSFET |
|