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BDT60A |
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| Part Number | BDT60A |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·Complement to Type BDT61/A... |
| Features |
CTERISTICS
SYMBOL
PARAMETER
-65~150 MAX
Rth j-c Thermal Resistance,Junction to Case
2.5
Rth j-c Thermal Resistance,Junction to Ambient 62.5
℃
UNIT ℃/W ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistors
BDT60/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDT60
-60
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT60A BDT60B
IC= -30mA; IB= 0
-80 -100
V
VCE(sat) VBE(on)
ICBO
BDT60C
Collector-Emitter Voltage
Saturation
Base-Emitter On Volt... |
| Document |
 BDT60A Data Sheet
PDF 216.26KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|
| 2 | BDT60 |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 3 | BDT60 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | BDT60A |
Power Innovations Limited |
PNP Transistor |
|
| 5 | BDT60A |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|