2SD1340 Inchange Semiconductor Silicon NPN Transistor Datasheet, en stock, prix

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2SD1340

Inchange Semiconductor
2SD1340
2SD1340 2SD1340
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Part Number 2SD1340
Manufacturer Inchange Semiconductor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for...
Features eakdown Voltage IC= 30mA; RBE= ∞ 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 40 130 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage tf Fall Time IF= 3.5A IC= 3A, IB1= 0.8A, IB2= 1.6A; RL= 66.7Ω; VCC= 200V 2.0 V 0.7 μs N...

Document Datasheet 2SD1340 Data Sheet
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