2SD1340 |
Part Number | 2SD1340 |
Manufacturer | Inchange Semiconductor |
Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for... |
Features |
eakdown Voltage IC= 30mA; RBE= ∞
800
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
8.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.5A; IB= 0.8A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
40
130 mA
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
8
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 10V
3
MHz
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF= 3.5A
IC= 3A, IB1= 0.8A, IB2= 1.6A; RL= 66.7Ω; VCC= 200V
2.0
V
0.7 μs
N... |
Document |
2SD1340 Data Sheet
PDF 205.49KB |
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