2SB891 Inchange Semiconductor Silicon PNP Power Transistor Datasheet, en stock, prix

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2SB891

Inchange Semiconductor
2SB891
2SB891 2SB891
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Part Number 2SB891
Manufacturer Inchange Semiconductor
Description ·High Collector Current -IC= -2A ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SD1189 ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio...
Features (BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -20V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -0.5A; VCE= -3V 2SB891 MIN TYP. MAX UNIT -40 V -32 V -5 V -0.8 V -1.0 μA -1.0 μA 82 390
 hFE Classifications P Q R 82-180 120-270 180-390 NOTICE: ISC reserves the rights to make changes of the content herein t...

Document Datasheet 2SB891 Data Sheet
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