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IS66WVE4M16EBLL |
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| Part Number | IS66WVE4M16EBLL |
| Manufacturer | ISSI |
| Description | PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 64Mb DRAM core device is organized as 4 Meg x 16 bits. These devices include ... |
| Features |
Asynchronous and page mode interface Dual voltage rails for optional performance ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V Page mode read access Interpage Read access : 55ns, 70ns Intrapage Read access : 20ns Low Power Consumption Asynchronous Operation < 30 mA Intrapage Read < 23mA Standby < 200 uA (max.) Deep power-down (DPD) ALL/CLL: < 3µA (Typ) BLL: < 10µA (Typ) Low Power Feature Temperature Controlled Refresh Partial Array Refresh Deep power-down (DPD) mode Operating temperature Ran... |
| Document |
 IS66WVE4M16EBLL Data Sheet
PDF 586.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IS66WVE4M16EALL |
ISSI |
64Mb Async/Page PSRAM |
|
| 2 | IS66WVE4M16ECLL |
ISSI |
64Mb Async/Page PSRAM |
|
| 3 | IS66WVE4M16ALL |
ISSI |
1.8V Core Async/Page PSRAM |
|
| 4 | IS66WVE4M16BLL |
ISSI |
3.0V Core Async/Page PSRAM |
|
| 5 | IS66WVE4M16TALL |
ISSI |
64Mb Async/Page PSRAM |
|