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MM10FU120K |
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| Part Number | MM10FU120K |
| Manufacturer | Thinki Semiconductor |
| Description | MM10FU120K using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified Symbol Paramete... |
| Features |
Current Power Dissipation Junction Temperature Storage Temperature Range Module-to-Sink
TC=110°C TC=110°C TJ=45°C, t=10ms, 50Hz, Sine
Recommended（M3）
1200 1200
10 15 100
70 -40 to +150 -40 to +150
1.1
V V A A A
W °C °C N ·m R θJC Thermal Resistance Junction-to-Case 1.8 °C /W Weight ELECTRICAL CHARACTERISTICS 2.2 g TC=25°C unless otherwise specified Symbol Parameter Test Conditions Min. Typ. Max. Unit IRM Reverse Leakage Current VR=1200V VR=1200V, TJ=125°C -- -- 100 µA -- -- 500 µA VF Forward Voltage I F =10A IF=10A, TJ=125°C -- 2.4 --- 1.85 -- V V trr Reverse Recovery Time... |
| Document |
 MM10FU120K Data Sheet
PDF 620.67KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MM10FU120K |
BLUE ROCKET ELECTRONICS |
Ultrafast Recovery Diode |
|
| 2 | MM10FU120K |
MACMIC |
FRED |
|
| 3 | MM1001 |
Innogration |
High Power RF LDMOS FET |
|
| 4 | MM1002 |
MITSUMI |
Video Amplifier |
|
| 5 | MM1002F |
MITSUMI |
Video Amplifier |
|