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ZXMN10B08E6 | N-CHANNEL ENHANCEMENT MODE MOSFET ZXMN10B08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.230 DESCRIPTION
ID = 1.9A
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines th |
Zetex Semiconductors |
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ZXMN10B08E6 | 100V N-CHANNEL MOSFET Product Summary
BVDSS 100V
Max RDS(on) 230mΩ @ VGS = 10V 300mΩ @ VGS = 4.5V
Max ID TA = +25C
(Note 5)
1.9A
1.68A
ZXMN10B08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Re |
DIODES |
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