डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
WPMD2010 | MOSFET WPMD2010
Dual P-Channel, -20 V, -3.6A, Power MOSFET
Description
The WPMD2010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC- |
WillSEMI |
|
WPMD2012 | MOSFET | WillSEMI |
|
WPMD2011 | MOSFET | WillSEMI |
|
WPMD2010 | MOSFET | WillSEMI |
|
WPMD2013 | MOSFET | WillSEMI |
www.DataSheet.in | 2017 | संपर्क |