| No. | Partie # | Fabricant | Description | Fiche Technique |
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ST Microelectronics |
N-Channel MOSFET • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectronics consolida |
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STMicroelectronics |
N-Channel MOSFET • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching • Fully isolated TO-3PF plastic package Applications • Switching applications Description These Power MOSFETs are designed using the STMicroelectronics consolida |
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STMicroelectronics |
N-CHANNEL MOSFET Type VDSS RDS(on) max ID Pw STFW4N150 1500 V <7Ω 4 A 63 W STP4N150 1500 V <7Ω 4 A 160 W STW4N150 1500 V <7Ω 4 A 160 W ■ 100% avalanche tested ■ Intrinsic capacitances and Qg minimized ■ High speed switching ■ Fully isolated TO-3PF plasti |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) < 7Ω ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching po |
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