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UPG2009TB | L-BAND HIGH POWER SPDT SWITCH DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2009TB
L-BAND HIGH POWER SPDT SWITCH
DESCRIPTION The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular or c |
NEC |
|
UPG2009TB | L-BAND HIGH POWER SPDT SWITCH NEC's L, S-BAND 4W SPDT SWITCH
UPG2009TB
FEATURES
• LOW INSERTION LOSS: LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
• HIGH ISOLATION: IS |
CEL |
www.DataSheet.in | 2017 | संपर्क |