TXY8205 डाटा शीट PDF( Datasheet )

TXY8205 Dual N CHANNEL High Density Trench MOSFET TYPE TXY8205 BVDSS 20V RDS(ON) 25mΩ@VGS=4.5V 35mΩ@VGS=2.5V ID 6A 4A Green Product Pin Description FEATURES High Density cell trench design for low Rd

Dual N-Channel High Density Trench MOSFET 双 N 沟道高密度场效应晶体管 TYPE 器件型号 BVDSS 漏-源极电压 TXY8205A 20V ID 电流 6A RDS(ON) (Typ.) 导通电阻 (典型值) 23mΩ @VGS=4.5V