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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIP112 | NPN Transistor isc Silicon NPN Darlington Power Transistor
TIP112
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturat |
INCHANGE |
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TIP112 | Power Transistors RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
See Below for
Part #
TO-220 - Power Transistors and Darlingtons
TO-220
4
12 3
Pin Config 1. Base 2. Collector 3. Emitter 4. Collector
Dimensions in millimeter |
RECTRON |
|
TIP112 | Silicon NPN Darlington Power Transistor MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
TIP110/111/112
Features
• The complementary PNP types |
MCC |
|
TIP112 | NPN Epitaxial Silicon Darlington Transistor TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor
November 2014
TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction with Built-in |
Fairchild Semiconductor |
|
TIP112 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ®
TIP110/112 TIP115/117
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s
s s
s
STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED AN |
STMicroelectronics |
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TIP112 | DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP110/D
Plastic Medium-Power Complementary Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applicati |
Motorola |
|
TIP112 | Plastic Medium-Power Complementary Silicon Transistors TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
Plastic Medium-Power Complementary Silicon Transistors
Designed for general−purpose amplifier and low−speed switching applications.
Features
• H |
ON Semiconductor |
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