TIM7785-4UL डाटा शीट PDF( Datasheet )

डेटा पत्रक ( Datasheet PDF )

भाग संख्या	विवरण	मैन्युफैक्चरर्स	PDF
TIM7785-4UL	MICROWAVE POWER GaAs FET FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-4UL R	Toshiba Semiconductor	PDF
TIM7785-4UL	MICROWAVE POWER GaAs FET	Toshiba Semiconductor	PDF

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