डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM6472-8UL | MICROWAVE POWER GaAs FET www.DataSheet4U.com
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM6472-8UL
TECHNICAL DATA FEATURES
n HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz n BROAD BAND |
Toshiba Semiconductor |
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TIM6472-8UL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |