TIM6472-35SL डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| TIM6472-35SL | MICROWAVE POWER GaAs FET FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN
G1dB= 8.0dB at 6.4GHz to 7.2GHz ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 35.0dBm Single C |
 Toshiba Semiconductor |
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| TIM6472-35SL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |