TIM6472-12UL डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| TIM6472-12UL | MICROWAVE POWER GaAs FET FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 41.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN
G1dB= 9.5dB at 6.4GHz to 7.2GHz ･LOW INTERMODULATION DISTORTION
IM3= -47dBc at Pout= 30.5dBm Single C |
 Toshiba Semiconductor |
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| TIM6472-12UL | MICROWAVE POWER GaAs FET | Toshiba Semiconductor |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |