TIM5964-8 डाटा शीट PDF( Datasheet )

MICROWAVE POWERwww.DataSheet4U.com GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-80SL TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level „ HIGH POWER P1dB=

MICROWAVE POWER GaAs FET TIM5964-8UL FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SEALED PACKAGE R