डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM5964-60SL | MICROWAVE POWER GaAs FET FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 48.0dBm at 5.9GHz to 6.4GHz ・HIGH GAIN
G1dB= 8.5dB at 5.9GHz to 6.4GHz ・LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 36.5dBm Single C |
Toshiba Semiconductor |
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TIM5964-60SL-422 | MICROWAVE POWER GaAs FET MICROWAVE POWER GaAs FET
TIM5964-60SL-422
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 48.0dBm at 5.85GHz to 6.75GHz ŋHIGH GAIN
G1dB= 8.0dB at 5.85GHz to 6.75GHz ŋLOW INTERMODULATION DISTOR |
Toshiba |
www.DataSheet.in | 2017 | संपर्क |