डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM5964-16SL | MICROWAVE POWER GaAs FET www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
|
Toshiba Semiconductor |
|
TIM5964-16SL-422 | MICROWAVE POWER GaAs FET FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 42.5dBm at 5.85GHz to 6.75GHz ・HIGH GAIN
G1dB= 8.0dB(min.) at 5.85GHz to 6.75GHz ・LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 31.5dB |
Toshiba |
www.DataSheet.in | 2017 | संपर्क |