TIM5359-45SL डाटा शीट PDF( Datasheet )

डेटा पत्रक ( Datasheet PDF )

भाग संख्या	विवरण	मैन्युफैक्चरर्स	PDF
TIM5359-45SL	MICROWAVE POWER GaAs FET FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 46.5dBm at 5.3GHz to 5.9GHz ･HIGH GAIN G1dB= 9.0dB at 5.3GHz to 5.9GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm Single C	Toshiba Semiconductor	PDF
TIM5359-45SL	MICROWAVE POWER GaAs FET	Toshiba Semiconductor	PDF

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